Granted Patent
Utility
US 6,423,562 · App. 09/983,189
Contact electrode for n-type gallium nitride-based compound semiconductor and method for forming the same
Inventors:
Masaaki Nido, Yukihiro Hisanaga
Patented Case
View Patent ↗
Granted: Jul 23, 2002
Filed: Oct 23, 2001
Inventors
Masaaki Nido
Yukihiro Hisanaga
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.