Granted Patent
Utility
US 6,426,248 · App. 09/734,429
Process for forming power MOSFET device in float zone, non-epitaxial silicon
Inventors:
Richard Francis, Chiu Ng
Patented Case
View Patent ↗
Granted: Jul 30, 2002
Filed: Dec 11, 2000
Inventors
Richard Francis
Chiu Ng
Assignee (at issue)
International Rectifier Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.