IP Library Granted Patent US 6,430,091
Granted Patent Utility
US 6,430,091 · App. 09/773,621

Semiconductor memory device having reduced current consumption at internal boosted potential

Inventor: Hiroaki Tanizaki
Patented Case View Patent ↗
Granted: Aug 6, 2002 Filed: Feb 2, 2001
Inventor
Hiroaki Tanizaki
Assignees (at issue)
MITSUBISHI ELECTRIC CORPORATION
MITSUBISHI ELECTRIC ENGINEERING COMPANY, LIMITED

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Quick Facts
Patent No.
US 6,430,091
App. No.
09/773,621
Filed
2001-02-02
Granted
2002-08-06
Kind
B2