Granted Patent
Utility
US 6,433,440 · App. 09/092,138
Semiconductor device having a porous buffer layer for semiconductor device
Inventors:
Masahiko Ogino, Shuji Eguchi, Akira Nagai, Takumi Ueno, Masanori Segawa, Hiroyoshi Kokaku, Toshiaki Ishii, Ichiro Anjoh, Asao Nishimura, Chuichi Miyazaki, Mamoru Mita, Norio Okabe
Patented Case
View Patent ↗
Granted: Aug 13, 2002
Filed: Jun 5, 1998
Inventors
Masahiko Ogino
Shuji Eguchi
Akira Nagai
Takumi Ueno
Masanori Segawa
Hiroyoshi Kokaku
Toshiaki Ishii
Ichiro Anjoh
Asao Nishimura
Chuichi Miyazaki
Mamoru Mita
Norio Okabe
Assignees (at issue)
HITACHI, LTD.
HITACHI CABLE, LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.