Granted Patent
Utility
US 6,436,768 · App. 09/893,279
Source drain implant during ONO formation for improved isolation of SONOS devices
Inventors:
Jean Y. Yang, Mark T. Ramsbey, Emmanuil Lingunis, Yider Wu, Tazrien Kamal, Yi He, Edward Hsia, Hidehiko Shiraiwa
Patented Case
View Patent ↗
Granted: Aug 20, 2002
Filed: Jun 27, 2001
Inventors
Jean Y. Yang
Mark T. Ramsbey
Emmanuil Lingunis
Yider Wu
Tazrien Kamal
Yi He
Edward Hsia
Hidehiko Shiraiwa
Assignees (at issue)
Advanced Micro Devices, Inc.
Fujitsu Limited
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.