Granted Patent
Utility
US 6,436,775 · App. 09/884,052
MOSFET device fabrication method capable of allowing application of self-aligned contact process while maintaining metal gate to have uniform thickness
Inventors:
Tae-Kyun Kim, Se-Aug Jang, In-Seok Yeo
Patented Case
View Patent ↗
Granted: Aug 20, 2002
Filed: Jun 20, 2001
Inventors
Tae-Kyun Kim
Se-Aug Jang
In-Seok Yeo
Assignee (at issue)
SK hynix Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.