Granted Patent
Utility
US 6,437,416 · App. 08/634,310
Semiconductor structure having a planar junction termination with high breakdown voltage and low parasitic capacitance
Inventor:
Francois Hebert
Patented Case
View Patent ↗
Granted: Aug 20, 2002
Filed: Apr 12, 1996
Inventor
Francois Hebert
Assignee (at issue)
Cree Microwave, LLC
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.