IP Library Granted Patent US 6,448,183
Granted Patent Utility
US 6,448,183 · App. 09/710,763

Method of forming contact portion of semiconductor element

Inventor: Byung Chul Lee
Patented Case View Patent ↗
Granted: Sep 10, 2002 Filed: Nov 11, 2000
Inventor
Byung Chul Lee
Assignees (at issue)
Anam Semiconductor
Ankor Technology, Inc.

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Quick Facts
Patent No.
US 6,448,183
App. No.
09/710,763
Filed
2000-11-11
Granted
2002-09-10
Kind
B1