IP Library › Granted Patent US 6,448,588
Granted Patent Utility
US 6,448,588 · App. 09/790,816

Insulated gate bipolar transistor having high breakdown voltage in reverse blocking mode

Inventors: Chong-man Yun, Soo Seong KIM, Young Dae Kwon
Patented Case View Patent ↗
Granted: Sep 10, 2002 Filed: Feb 23, 2001
Inventors
Chong-man Yun
Soo Seong KIM
Young Dae Kwon
Assignee (at issue)
Fairchild Korea Semiconductor Ltd.

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Quick Facts
Patent No.
US 6,448,588
App. No.
09/790,816
Filed
2001-02-23
Granted
2002-09-10
Kind
B2