Granted Patent
Utility
US 6,451,640 · App. 09/609,352
Semiconductor device having NMOS and PMOS transistors on common substrate and method of fabricating the same
Inventor:
Toshihiko Ichikawa
Patented Case
View Patent ↗
Granted: Sep 17, 2002
Filed: Jul 5, 2000
Inventor
Toshihiko Ichikawa
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.