IP Library › Granted Patent US 6,455,340
Granted Patent Utility
US 6,455,340 · App. 10/024,236

Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff

Inventors: Christopher L. Chua, Michael A. Kneissl, David P. Bour
Patented Case View Patent ↗
Granted: Sep 24, 2002 Filed: Dec 21, 2001
Inventors
Christopher L. Chua
Michael A. Kneissl
David P. Bour
Assignee (at issue)
Xerox Corporation

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Quick Facts
Patent No.
US 6,455,340
App. No.
10/024,236
Filed
2001-12-21
Granted
2002-09-24
Kind
B1