Granted Patent
Utility
US 6,458,640 · App. 09/871,740
GaAs MESFET having LDD and non-uniform P-well doping profiles
Inventor:
Weiqi Li
Patented Case
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Granted: Oct 1, 2002
Filed: Jun 4, 2001
Inventor
Weiqi Li
Assignee (at issue)
ANADIGICS, INC.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.