IP Library Granted Patent US 6,458,664
Granted Patent Utility
US 6,458,664 · App. 09/726,960

Method for fabricating a field-effect transistor having an anti-punch-through implantation region

Inventors: Frank Richter, Dieter Temmpler
Patented Case View Patent ↗
Granted: Oct 1, 2002 Filed: Nov 30, 2000
Inventors
Frank Richter
Dieter Temmpler
Assignee (at issue)
Infineon Technologies AG

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Quick Facts
Patent No.
US 6,458,664
App. No.
09/726,960
Filed
2000-11-30
Granted
2002-10-01
Kind
B2