Granted Patent
Utility
US 6,458,679 · App. 09/780,454
Method of making silicide stop layer in a damascene semiconductor structure
Inventors:
Eric N. Paton, Paul R. Besser, Matthew S. Buynoski, Qi Xiang, Paul L. King, John Foster
Patented Case
View Patent ↗
Granted: Oct 1, 2002
Filed: Feb 12, 2001
Inventors
Eric N. Paton
Paul R. Besser
Matthew S. Buynoski
Qi Xiang
Paul L. King
John Foster
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.