IP Library Granted Patent US 6,461,428
Granted Patent Utility
US 6,461,428 · App. 09/729,669

Method and apparatus for controlling rise and fall of temperature in semiconductor substrates

Inventors: Shyuji Tobashi, Tadashi Ohashi, Katsuyuki Iwata, Hiroyuki Saito, Shinichi Mitani, Takaaki Honda, Hideki Arai, Yoshitaka Murofushi, Kunihiko Suzuki, Hidenori Takahashi, Hideki Ito, Hirofumi Katsumata
Patented Case View Patent ↗
Granted: Oct 8, 2002 Filed: Dec 5, 2000
Inventors
Shyuji Tobashi
Tadashi Ohashi
Katsuyuki Iwata
Hiroyuki Saito
Shinichi Mitani
Takaaki Honda
Hideki Arai
Yoshitaka Murofushi
Kunihiko Suzuki
Hidenori Takahashi
Hideki Ito
Hirofumi Katsumata
Assignees (at issue)
Toshiba Ceramics Co., Ltd.
Toshiba Kikai Kabushiki Kaisha

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Quick Facts
Patent No.
US 6,461,428
App. No.
09/729,669
Filed
2000-12-05
Granted
2002-10-08
Kind
B2