IP Library Granted Patent US 6,465,303
Granted Patent Utility
US 6,465,303 · App. 09/885,490

Method of manufacturing spacer etch mask for silicon-oxide-nitride-oxide-silicon (SONOS) type nonvolatile memory

Inventors: Mark T. Ramsbey, Narbeh Derhacobian, Janet Wang, Angela T. Hui, Tuan Pham, Ravi Sunkavalli, Mark Randolph
Patented Case View Patent ↗
Granted: Oct 15, 2002 Filed: Jun 20, 2001
Inventors
Mark T. Ramsbey
Narbeh Derhacobian
Janet Wang
Angela T. Hui
Tuan Pham
Ravi Sunkavalli
Mark Randolph
Assignee (at issue)
Advanced Micro Devices, Inc.

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Quick Facts
Patent No.
US 6,465,303
App. No.
09/885,490
Filed
2001-06-20
Granted
2002-10-15
Kind
B1