IP Library › Granted Patent US 6,465,835
Granted Patent Utility
US 6,465,835 · App. 09/487,964

Charge gain/charge loss junction leakage prevention for flash technology by using double isolation/capping layer between lightly doped drain and gate

Inventors: Tuan Pham, Mark T. Ramsbey, Sameer Haddad, Angela T. Hui
Patented Case View Patent ↗
Granted: Oct 15, 2002 Filed: Jan 18, 2000
Inventors
Tuan Pham
Mark T. Ramsbey
Sameer Haddad
Angela T. Hui
Assignee (at issue)
Advanced Micro Devices, Inc.

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Quick Facts
Patent No.
US 6,465,835
App. No.
09/487,964
Filed
2000-01-18
Granted
2002-10-15
Kind
B1