IP Library Granted Patent US 6,468,818
Granted Patent Utility
US 6,468,818 · App. 09/490,534

Method for producing a high-luminance semiconductor light-emitting device capable of operating at a low voltage

Inventors: Junichi Nakamura, Hiroshi Nakatsu, Kazuaki Sasaki
Patented Case View Patent ↗
Granted: Oct 22, 2002 Filed: Jan 25, 2000
Inventors
Junichi Nakamura
Hiroshi Nakatsu
Kazuaki Sasaki
Assignee (at issue)
SHARP KABUSHIKI KAISHA

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Quick Facts
Patent No.
US 6,468,818
App. No.
09/490,534
Filed
2000-01-25
Granted
2002-10-22
Kind
B2