IP Library › Granted Patent US 6,475,847
Granted Patent Utility
US 6,475,847 · App. 10/109,526

Method for forming a semiconductor device with self-aligned contacts using a liner oxide layer

Inventors: Minh Van Ngo, Yu Sun, Fei Wang, Mark T. Ramsbey, Chi Chang, Angela T. Hui, Mark S. Chang
Patented Case View Patent ↗
Granted: Nov 5, 2002 Filed: Mar 27, 2002
Inventors
Minh Van Ngo
Yu Sun
Fei Wang
Mark T. Ramsbey
Chi Chang
Angela T. Hui
Mark S. Chang
Assignee (at issue)
Advanced Micro Devices, Inc.

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Quick Facts
Patent No.
US 6,475,847
App. No.
10/109,526
Filed
2002-03-27
Granted
2002-11-05
Kind
B1