Granted Patent
Utility
US 6,475,852 · App. 09/999,886
Method of forming field effect transistors and related field effect transistor constructions
Inventors:
Zhiqiang Wu, Paul Hatab
Patented Case
View Patent ↗
Granted: Nov 5, 2002
Filed: Oct 31, 2001
Inventors
Zhiqiang Wu
Paul Hatab
Assignee (at issue)
Micron Technology, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.