Granted Patent
Utility
US 6,475,862 · App. 09/636,078
Semiconductor device having gate insulating layers different in thickness and material and process for fabrication thereof
Inventor:
Koichi Ando
Patented Case
View Patent ↗
Granted: Nov 5, 2002
Filed: Aug 10, 2000
Inventor
Koichi Ando
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.