Granted Patent
Utility
US 6,475,868 · App. 09/640,082
Oxygen implantation for reduction of junction capacitance in MOS transistors
Inventors:
Ming-Yin Hao, Asim A. Selcuk, Richard P. Rouse, Emi Ishida
Patented Case
View Patent ↗
Granted: Nov 5, 2002
Filed: Aug 17, 2000
Inventors
Ming-Yin Hao
Asim A. Selcuk
Richard P. Rouse
Emi Ishida
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.