Granted Patent
Utility
US 6,476,492 · App. 09/758,288
Semiconductor device having a capacitor and an interconnect layer with molybdenum-containing tungsten
Inventors:
Tomio Iwasaki, Hideo Miura, Takashi Nakajima, Hiroyuki Ohta, Shinji Nishihara, Masashi Sahara
Patented Case
View Patent ↗
Granted: Nov 5, 2002
Filed: Jan 12, 2001
Inventors
Tomio Iwasaki
Hideo Miura
Takashi Nakajima
Hiroyuki Ohta
Shinji Nishihara
Masashi Sahara
Assignee (at issue)
HITACHI, LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.