IP Library Granted Patent US 6,479,362
Granted Patent Utility
US 6,479,362 · App. 09/783,689

Semiconductor device with high-temperature-stable gate electrode for sub-micron applications and fabrication thereof

Inventor: James A. Cunningham
Patented Case View Patent ↗
Granted: Nov 12, 2002 Filed: Feb 14, 2001
Inventor
James A. Cunningham
Assignee (at issue)
KONINKLIJKE PHILIPS ELECTRONICS NV

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Quick Facts
Patent No.
US 6,479,362
App. No.
09/783,689
Filed
2001-02-14
Granted
2002-11-12
Kind
B2