Granted Patent
Utility
US 6,479,404 · App. 09/641,160
Process for fabricating a semiconductor device having a metal oxide or a metal silicate gate dielectric layer
Inventors:
Michael L. Steigerwald, Glen Wilk
Patented Case
View Patent ↗
Granted: Nov 12, 2002
Filed: Aug 17, 2000
Inventors
Michael L. Steigerwald
Glen Wilk
Assignee (at issue)
Agere Systems Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.