IP Library Granted Patent US 6,482,697
Granted Patent Utility
US 6,482,697 · App. 09/705,880

Method of forming a highly integrated non-volatile semiconductor memory device

Inventor: Hiroki Shirai
Patented Case View Patent ↗
Granted: Nov 19, 2002 Filed: Nov 6, 2000
Inventor
Hiroki Shirai
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 6,482,697
App. No.
09/705,880
Filed
2000-11-06
Granted
2002-11-19
Kind
B1