Granted Patent
Utility
US 6,483,172 · App. 09/562,217
Semiconductor device structure with hydrogen-rich layer for facilitating passivation of surface states
Inventors:
Donna R. Cote, William J. Cote, Son V. Nguyen, Markus Kirchhoff, Max G. Levy, Manfred Hauf
Patented Case
View Patent ↗
Granted: Nov 19, 2002
Filed: Apr 28, 2000
Inventors
Donna R. Cote
William J. Cote
Son V. Nguyen
Markus Kirchhoff
Max G. Levy
Manfred Hauf
Assignees (at issue)
Siemens Aktiengesellschaft
International Business Machines Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.