Granted Patent
Utility
US 6,485,573 · App. 09/855,654
Apparatus for reduced-pressure epitaxial growth and method of controlling the apparatus
Inventors:
Katsuyuki Iwata, Tadashi Ohashi, Shyuji Tobashi, Shinichi Mitani, Hideki Arai, Hideki Ito
Patented Case
View Patent ↗
Granted: Nov 26, 2002
Filed: May 16, 2001
Inventors
Katsuyuki Iwata
Tadashi Ohashi
Shyuji Tobashi
Shinichi Mitani
Hideki Arai
Hideki Ito
Assignees (at issue)
Toshiba Ceramics Co., Ltd.
Toshiba Kikai Kabushiki Kaisha
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.