Granted Patent
Utility
US 6,486,512 · App. 09/790,815
Power semiconductor device having high breakdown voltage and method for fabricating the same
Inventors:
Chang-ki Jeon, Jong-jib Kim, Young-Suk Choi, Chang-seong Choi, Min-whan Kim
Patented Case
View Patent ↗
Granted: Nov 26, 2002
Filed: Feb 23, 2001
Inventors
Chang-ki Jeon
Jong-jib Kim
Young-Suk Choi
Chang-seong Choi
Min-whan Kim
Assignee (at issue)
Fairchild Korea Semiconductor Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.