Granted Patent
Utility
US 6,489,236 · App. 09/692,471
Method for manufacturing a semiconductor device having a silicide layer
Inventors:
Atsuki Ono, Kiyotaka Imai
Patented Case
View Patent ↗
Granted: Dec 3, 2002
Filed: Oct 20, 2000
Inventors
Atsuki Ono
Kiyotaka Imai
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.