IP Library Granted Patent US 6,489,587
Granted Patent Utility
US 6,489,587 · App. 09/752,671

Fabrication method of erbium-doped silicon nano-size dots

Inventors: Jeong-Sook Ha, Kyoung Wan Park, Seung-Min Park, Young Jo Ko
Patented Case View Patent ↗
Granted: Dec 3, 2002 Filed: Dec 28, 2000
Inventors
Jeong-Sook Ha
Kyoung Wan Park
Seung-Min Park
Young Jo Ko
Assignee (at issue)
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

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Quick Facts
Patent No.
US 6,489,587
App. No.
09/752,671
Filed
2000-12-28
Granted
2002-12-03
Kind
B2