Granted Patent
Utility
US 6,492,679 · App. 09/920,655
Method for manufacturing a high voltage MOSFET device with reduced on-resistance
Inventors:
Mohamed Imam, Joe Fulton, Zia Hossain, Masami Tanaka, Taku Yamamoto, Yoshio Enosawa, Katsuya Yamazaki, Evgueniy Stefanov
Patented Case
View Patent ↗
Granted: Dec 10, 2002
Filed: Aug 3, 2001
Inventors
Mohamed Imam
Joe Fulton
Zia Hossain
Masami Tanaka
Taku Yamamoto
Yoshio Enosawa
Katsuya Yamazaki
Evgueniy Stefanov
Assignee (at issue)
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.