Granted Patent
Utility
US 6,497,764 · App. 09/761,808
Method for growing SiC single crystals
Inventors:
Harald Kuhn, Rene Stein, Johannes Volkl
Patented Case
View Patent ↗
Granted: Dec 24, 2002
Filed: Jan 16, 2001
Inventors
Harald Kuhn
Rene Stein
Johannes Volkl
Assignee (at issue)
Siemens Aktiengesellschaft
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.