Granted Patent
Utility
US 6,500,255 · App. 09/853,232
Process for growing silicon crystals which allows for variability in the process conditions while suppressing the formation of agglomerated intrinsic point defects
Inventors:
Robert J. Falster, Vladimir V. Voronkov, Paolo Mutti
Patented Case
View Patent ↗
Granted: Dec 31, 2002
Filed: May 11, 2001
Inventors
Robert J. Falster
Vladimir V. Voronkov
Paolo Mutti
Assignee (at issue)
MEMC Electronic Materials, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.