IP Library › Granted Patent US 6,500,712
Granted Patent Utility
US 6,500,712 · App. 10/174,442

Fabrication of dielectric in trenches formed in a semiconductor substrate for a nonvolatile memory

Inventor: Kuo-Chun Wu
Patented Case View Patent ↗
Granted: Dec 31, 2002 Filed: Jun 17, 2002
Inventor
Kuo-Chun Wu
Assignee (at issue)
MOSEL VITELIC INC.

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Quick Facts
Patent No.
US 6,500,712
App. No.
10/174,442
Filed
2002-06-17
Granted
2002-12-31
Kind
B1