IP Library › Granted Patent US 6,500,727
Granted Patent Utility
US 6,500,727 · App. 09/957,423

Silicon shallow trench etching with round top corner by photoresist-free process

Inventors: Cheng-Ku Chen, Fang Chen, Hun-Jan Tao
Patented Case View Patent ↗
Granted: Dec 31, 2002 Filed: Sep 21, 2001
Inventors
Cheng-Ku Chen
Fang Chen
Hun-Jan Tao
Assignee (at issue)
Taiwan Semiconductor Manufacturing Company, Ltd.

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Quick Facts
Patent No.
US 6,500,727
App. No.
09/957,423
Filed
2001-09-21
Granted
2002-12-31
Kind
B1