Granted Patent
Utility
US 6,503,563 · App. 09/971,801
Method of producing polycrystalline silicon for semiconductors from saline gas
Inventors:
Yoshifumi Yatsurugi, Shinichiro Inoue
Patented Case
View Patent ↗
Granted: Jan 7, 2003
Filed: Oct 9, 2001
Inventors
Yoshifumi Yatsurugi
Shinichiro Inoue
Assignee (at issue)
KOMATSU LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.