IP Library Granted Patent US 6,503,791
Granted Patent Utility
US 6,503,791 · App. 09/767,706

Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device

Inventors: Yuichi Matsui, Masahiko Hiratani, Yasuhiro Shimamoto, Yoshitaka Nakamura, Toshihide Nabatame
Patented Case View Patent ↗
Granted: Jan 7, 2003 Filed: Jan 24, 2001
Inventors
Yuichi Matsui
Masahiko Hiratani
Yasuhiro Shimamoto
Yoshitaka Nakamura
Toshihide Nabatame
Assignee (at issue)
HITACHI, LTD.

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Quick Facts
Patent No.
US 6,503,791
App. No.
09/767,706
Filed
2001-01-24
Granted
2003-01-07
Kind
B2