IP Library Granted Patent US 6,506,676
Granted Patent Utility
US 6,506,676 · App. 10/033,509

Method of manufacturing semiconductor devices with titanium aluminum nitride work function

Inventors: Dae-Gyu Park, Tae-Ho Cha, Se-Aug Jang, Heung-Jae Cho, Tae-Kyun Kim, Kwan-Yong Lim, In-Seok Yeo, Jin Won Park
Patented Case View Patent ↗
Granted: Jan 14, 2003 Filed: Dec 27, 2001
Inventors
Dae-Gyu Park
Tae-Ho Cha
Se-Aug Jang
Heung-Jae Cho
Tae-Kyun Kim
Kwan-Yong Lim
In-Seok Yeo
Jin Won Park
Assignee (at issue)
SK hynix Inc.

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Quick Facts
Patent No.
US 6,506,676
App. No.
10/033,509
Filed
2001-12-27
Granted
2003-01-14
Kind
B2