IP Library › Granted Patent US 6,507,080
Granted Patent Utility
US 6,507,080 · App. 09/761,902

MOS transistor and fabrication method thereof

Inventors: Kyung-Oun Jang, Sun-Hak Lee
Patented Case View Patent ↗
Granted: Jan 14, 2003 Filed: Jan 17, 2001
Inventors
Kyung-Oun Jang
Sun-Hak Lee
Assignee (at issue)
Fairchild Korea Semiconductor Ltd.

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Quick Facts
Patent No.
US 6,507,080
App. No.
09/761,902
Filed
2001-01-17
Granted
2003-01-14
Kind
B2