Granted Patent
Utility
US 6,509,232 · App. 09/969,573
Formation of STI (shallow trench isolation) structures within core and periphery areas of flash memory device
Inventors:
Unsoon Kim, Mark S. Chang, Yider Wu, Chi Chang, Angela T. Hui, Yu Sun
Patented Case
View Patent ↗
Granted: Jan 21, 2003
Filed: Oct 1, 2001
Inventors
Unsoon Kim
Mark S. Chang
Yider Wu
Chi Chang
Angela T. Hui
Yu Sun
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.