Granted Patent
Utility
US 6,509,233 · App. 10/094,476
Method of making trench-gated MOSFET having cesium gate oxide layer
Inventors:
Mike F. Chang, Sik Lui, Sung-Shan Tai
Patented Case
View Patent ↗
Granted: Jan 21, 2003
Filed: Mar 7, 2002
Inventors
Mike F. Chang
Sik Lui
Sung-Shan Tai
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.