Granted Patent
Utility
US 6,509,238 · App. 10/100,676
Method for manufacturing a MOS device with improved well control stability
Inventors:
Teng-Feng Wang, Lung-Wen Chen, Chen-Chiu Hsue
Patented Case
View Patent ↗
Granted: Jan 21, 2003
Filed: Mar 18, 2002
Inventors
Teng-Feng Wang
Lung-Wen Chen
Chen-Chiu Hsue
Assignee (at issue)
Silicon Integrated Systems Corp.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.