Granted Patent
Utility
US 6,509,282 · App. 09/994,128
Silicon-starved PECVD method for metal gate electrode dielectric spacer
Inventors:
Minh Van Ngo, Arvind Halliyal
Patented Case
View Patent ↗
Granted: Jan 21, 2003
Filed: Nov 26, 2001
Inventors
Minh Van Ngo
Arvind Halliyal
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.