Granted Patent
Utility
US 6,510,076 · App. 10/073,036
Variable read/write margin high-performance soft-error tolerant SRAM bit cell
Inventors:
Curtis Lapadat, Vikram Madhukar Labhe, Gavril Margittai, Mamta Bansal
Patented Case
View Patent ↗
Granted: Jan 21, 2003
Filed: Feb 12, 2002
Inventors
Curtis Lapadat
Vikram Madhukar Labhe
Gavril Margittai
Mamta Bansal
Assignee (at issue)
PMC-Sierra, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.