Granted Patent
Utility
US 6,514,825 · App. 09/606,778
Technique for reducing 1/f noise in MOSFETs
Inventors:
Sandeep Louis D'Souza, Li-Ming Hwang, Aniruddha Joshi, Suryanarayana Shivakumar Bhattacharya
Patented Case
View Patent ↗
Granted: Feb 4, 2003
Filed: Jun 28, 2000
Inventors
Sandeep Louis D'Souza
Li-Ming Hwang
Aniruddha Joshi
Suryanarayana Shivakumar Bhattacharya
Assignee (at issue)
Conexant Systems, LLC
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.