Granted Patent
Utility
US 6,514,826 · App. 09/721,636
Method of forming a gate electrode in a semiconductor device
Inventors:
Dae-Gyu Park, Tae-Ho Cha
Patented Case
View Patent ↗
Granted: Feb 4, 2003
Filed: Nov 27, 2000
Inventors
Dae-Gyu Park
Tae-Ho Cha
Assignee (at issue)
Hyundai Electronics Industries Co. Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.