Granted Patent
Utility
US 6,517,632 · App. 09/760,713
Method of fabricating a single crystal ingot and method of fabricating a silicon wafer
Inventors:
Toshirou Minami, Yumiko Hirano, Kouki Ikeuchi, Takashi Miyahara, Takashi Ishikawa, Osamu Kubota, Akihiko Kobayashi
Patented Case
View Patent ↗
Granted: Feb 11, 2003
Filed: Jan 17, 2001
Inventors
Toshirou Minami
Yumiko Hirano
Kouki Ikeuchi
Takashi Miyahara
Takashi Ishikawa
Osamu Kubota
Akihiko Kobayashi
Assignee (at issue)
Toshiba Ceramics Co., Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.