IP Library Granted Patent US 6,521,935
Granted Patent Utility
US 6,521,935 · App. 10/027,524

Mos transistor and dram cell configuration

Inventors: Wolfgang Krautschneider, Till Schlösser, Josef Willer
Patented Case View Patent ↗
Granted: Feb 18, 2003 Filed: Dec 26, 2001
Inventors
Wolfgang Krautschneider
Till Schlösser
Josef Willer
Assignee (at issue)
Infineon Technologies AG

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Quick Facts
Patent No.
US 6,521,935
App. No.
10/027,524
Filed
2001-12-26
Granted
2003-02-18
Kind
B2