Granted Patent
Utility
US 6,524,899 · App. 09/667,360
Process for forming a large area, high gate current HEMT diode
Inventors:
Ronald W. Grundbacher, Richard Lai, Mark Kintis, Michael E. Barsky, Roger Tsai
Patented Case
View Patent ↗
Granted: Feb 25, 2003
Filed: Sep 21, 2000
Inventors
Ronald W. Grundbacher
Richard Lai
Mark Kintis
Michael E. Barsky
Roger Tsai
Assignee (at issue)
TRW Limited
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.